BUK765R0-100E,118 Nexperia
auf Bestellung 4830 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 189+ | 2.87 EUR |
| 500+ | 2.61 EUR |
| 1000+ | 2.38 EUR |
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Technische Details BUK765R0-100E,118 Nexperia
Description: MOSFET N-CH 100V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11810 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK765R0-100E,118 nach Preis ab 2.04 EUR bis 9.31 EUR
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BUK765R0-100E,118 | Hersteller : Nexperia |
 Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 7100 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK765R0-100E,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11810 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK765R0-100E,118 | Hersteller : Nexperia |
MOSFETs SOT404 100V 120A |
auf Bestellung 5967 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK765R0-100E,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11810 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK765R0-100E,118 | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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BUK765R0-100E,118 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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BUK765R0-100E,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 115A; 349W; D2PAK,SOT404 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 180nC On-state resistance: 13.5mΩ Drain current: 115A Power dissipation: 349W Gate-source voltage: ±20V Drain-source voltage: 100V Application: automotive industry Case: D2PAK; SOT404 |
Produkt ist nicht verfügbar |