| Anzahl | Preis |
|---|---|
| 4+ | 0.86 EUR |
| 10+ | 0.59 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.31 EUR |
| 2000+ | 0.26 EUR |
| 5000+ | 0.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK7880-55A/CUX Nexperia
Description: MOSFET N-CH 55V 7A SOT223, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 8W (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK7880-55A/CUX nach Preis ab 0.59 EUR bis 1.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BUK7880-55A/CUX | Nexperia USA Inc. |
 Description: MOSFET N-CH 55V 7A SOT223Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 8W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
auf Bestellung 1327 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BUK7880-55A/CUX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 7A SOT223
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 55V 7A SOT223
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 1327 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.48 EUR |
| 20+ | 0.92 EUR |
| 50+ | 0.67 EUR |
| 100+ | 0.59 EUR |