BUK7E1R8-40E,127 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A I2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
| Anzahl | Preis |
|---|---|
| 243+ | 2.02 EUR |
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Technische Details BUK7E1R8-40E,127 Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A I2PAK, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 349W (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Bulk, FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote BUK7E1R8-40E,127
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BUK7E1R8-40E,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A I2PAKMounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar |
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BUK7E1R8-40E,127 | Hersteller : Nexperia |
MOSFET BUK7E1R8-40E/I2PAK/STANDARD MA |
Produkt ist nicht verfügbar |
