
BUK7J1R4-40HX Nexperia
auf Bestellung 792 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
134+ | 1.13 EUR |
223+ | 0.65 EUR |
227+ | 0.62 EUR |
230+ | 0.59 EUR |
234+ | 0.55 EUR |
250+ | 0.52 EUR |
500+ | 0.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK7J1R4-40HX Nexperia
Description: MOSFET N-CH 40V 190A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V, Power Dissipation (Max): 395W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56; Power-SO8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): +20V, -10V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8155 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK7J1R4-40HX nach Preis ab 0.93 EUR bis 4.26 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
BUK7J1R4-40HX | Hersteller : Nexperia |
![]() |
auf Bestellung 1425 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
BUK7J1R4-40HX | Hersteller : Nexperia |
![]() |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
BUK7J1R4-40HX | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56; Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8155 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
BUK7J1R4-40HX | Hersteller : Nexperia |
![]() |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
BUK7J1R4-40HX | Hersteller : Nexperia |
![]() |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
BUK7J1R4-40HX | Hersteller : Nexperia |
![]() |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
BUK7J1R4-40HX | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56; Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8155 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3692 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
BUK7J1R4-40HX | Hersteller : Nexperia |
![]() |
auf Bestellung 25194 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
BUK7J1R4-40HX | Hersteller : NEXPERIA |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
BUK7J1R4-40HX | Hersteller : Nexperia |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||
BUK7J1R4-40HX | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W Application: automotive industry Power dissipation: 395W Polarisation: unipolar Kind of package: reel; tape Case: LFPAK56E; PowerSO8; SOT1023 Mounting: SMD Gate charge: 103nC Technology: Trench Kind of channel: enhancement Drain-source voltage: 40V Pulsed drain current: 600A Drain current: 190A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
BUK7J1R4-40HX | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W Application: automotive industry Power dissipation: 395W Polarisation: unipolar Kind of package: reel; tape Case: LFPAK56E; PowerSO8; SOT1023 Mounting: SMD Gate charge: 103nC Technology: Trench Kind of channel: enhancement Drain-source voltage: 40V Pulsed drain current: 600A Drain current: 190A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |