BUK7S2R0-40HJ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: BUK7S2R0-40H/SOT1235/LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 5075 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 183W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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Technische Details BUK7S2R0-40HJ Nexperia USA Inc.
Description: BUK7S2R0-40H/SOT1235/LFPAK88, Input Capacitance (Ciss) (Max) @ Vds: 5075 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): +20V, -10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: LFPAK88 (SOT1235), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Power Dissipation (Max): 183W (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 190A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1235, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote BUK7S2R0-40HJ nach Preis ab 1.89 EUR bis 5.13 EUR
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BUK7S2R0-40HJ | Nexperia USA Inc. |
Description: BUK7S2R0-40H/SOT1235/LFPAK88 Input Capacitance (Ciss) (Max) @ Vds: 5075 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +20V, -10V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK88 (SOT1235) Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 183W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1235 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 5660 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK7S2R0-40HJ |
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Hersteller: Nexperia USA Inc.
Description: BUK7S2R0-40H/SOT1235/LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 5075 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 183W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: BUK7S2R0-40H/SOT1235/LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 5075 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 183W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5660 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.13 EUR |
| 10+ | 3.49 EUR |
| 100+ | 2.49 EUR |
| 500+ | 2.08 EUR |
| 1000+ | 1.89 EUR |