auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.16 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.47 EUR |
| 500+ | 1.22 EUR |
| 1000+ | 0.96 EUR |
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Technische Details BUK7Y08-40B,115 Nexperia
Description: MOSFET N-CH 40V 75A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V, Power Dissipation (Max): 105W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK7Y08-40B,115
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| BUK7Y08-40B,115 | Hersteller : NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W Application: automotive industry Power dissipation: 105W Polarisation: unipolar Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD Gate charge: 36.3nC Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 332A Drain current: 58.85A On-state resistance: 8mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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BUK7Y08-40B,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BUK7Y08-40B,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| BUK7Y08-40B,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W Application: automotive industry Power dissipation: 105W Polarisation: unipolar Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD Gate charge: 36.3nC Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 332A Drain current: 58.85A On-state resistance: 8mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |