Technische Details BUK7Y15-100EX Nexperia USA Inc.
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 274A; 195W, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: reel; tape, Mounting: SMD, Polarisation: unipolar, Gate charge: 54.5nC, On-state resistance: 41.5mΩ, Drain current: 48A, Power dissipation: 195W, Gate-source voltage: ±20V, Pulsed drain current: 274A, Drain-source voltage: 100V, Application: automotive industry, Case: LFPAK56; PowerSO8; SOT669.
Weitere Produktangebote BUK7Y15-100EX
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BUK7Y15-100EX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 100V 68A LFPAK56 |
Produkt ist nicht verfügbar |
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BUK7Y15-100EX | Hersteller : Nexperia |
MOSFET N-channel 60 V 15 mOhm MOSFET |
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| BUK7Y15-100EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 274A; 195W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 54.5nC On-state resistance: 41.5mΩ Drain current: 48A Power dissipation: 195W Gate-source voltage: ±20V Pulsed drain current: 274A Drain-source voltage: 100V Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |