BUK7Y28-75B,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 75V 35.5A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.5A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1380 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.31 EUR |
| 13+ | 1.43 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.67 EUR |
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Technische Details BUK7Y28-75B,115 Nexperia USA Inc.
Description: MOSFET N-CH 75V 35.5A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35.5A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK7Y28-75B,115 nach Preis ab 0.49 EUR bis 2.32 EUR
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BUK7Y28-75B,115 | Hersteller : Nexperia |
MOSFETs SOT669 N-CH 75V 35.5A |
auf Bestellung 1366 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y28-75B,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 75V 35.5A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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| BUK7Y28-75B,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 25.1A; Idm: 142A; 85W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 21.2nC On-state resistance: 67.2mΩ Drain current: 25.1A Power dissipation: 85W Gate-source voltage: ±20V Pulsed drain current: 142A Drain-source voltage: 75V Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK7Y28-75B,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 75V 35.5A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.5A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| BUK7Y28-75B,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 25.1A; Idm: 142A; 85W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 21.2nC On-state resistance: 67.2mΩ Drain current: 25.1A Power dissipation: 85W Gate-source voltage: ±20V Pulsed drain current: 142A Drain-source voltage: 75V Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |