Produkte > NEXPERIA USA INC. > BUK7Y53-100B,115
BUK7Y53-100B,115

BUK7Y53-100B,115 Nexperia USA Inc.


BUK7Y53-100B.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 24.8A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1467 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.54 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BUK7Y53-100B,115 Nexperia USA Inc.

Description: MOSFET N-CH 100V 24.8A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1467 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote BUK7Y53-100B,115 nach Preis ab 0.56 EUR bis 1.72 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
BUK7Y53-100B,115 BUK7Y53-100B,115 Hersteller : Nexperia BUK7Y53-100B.pdf MOSFETs BUK7Y53-100B/SOT669/LFPAK
auf Bestellung 1421 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.65 EUR
10+1.26 EUR
100+0.89 EUR
500+0.71 EUR
1500+0.63 EUR
3000+0.56 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
BUK7Y53-100B,115 BUK7Y53-100B,115 Hersteller : Nexperia USA Inc. BUK7Y53-100B.pdf Description: MOSFET N-CH 100V 24.8A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1467 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
14+1.33 EUR
100+0.91 EUR
500+0.75 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
BUK7Y53-100B,115 BUK7Y53-100B,115 Hersteller : NEXPERIA 4221769744474744buk7y53-100b.pdf Trans MOSFET N-CH 100V 24.8A Automotive 5-Pin(4+Tab) LFPAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7Y53-100B,115 Hersteller : NEXPERIA BUK7Y53-100B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 85W
Application: automotive industry
Power dissipation: 85W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 99A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 100V
Drain current: 17.6A
On-state resistance: 138mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7Y53-100B,115 Hersteller : NEXPERIA BUK7Y53-100B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 85W
Application: automotive industry
Power dissipation: 85W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 99A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 100V
Drain current: 17.6A
On-state resistance: 138mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH