BUK7Y7R8-80EX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 80V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5347 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 19500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 2.12 EUR |
| 3000+ | 2.02 EUR |
| 7500+ | 1.94 EUR |
| 10500+ | 1.88 EUR |
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Technische Details BUK7Y7R8-80EX Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V, Power Dissipation (Max): 238W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 63.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5347 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote BUK7Y7R8-80EX nach Preis ab 1.98 EUR bis 4.47 EUR
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BUK7Y7R8-80EX | Hersteller : Nexperia |
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auf Bestellung 2312 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK7Y7R8-80EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 63.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5347 pF @ 25 V Qualification: AEC-Q100 |
auf Bestellung 19557 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK7Y7R8-80EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 100A Automotive 5-Pin(4+Tab) LFPAK T/R |
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| BUK7Y7R8-80EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 441A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 78A Pulsed drain current: 441A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 19.6mΩ Mounting: SMD Gate charge: 63.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y7R8-80EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 441A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 78A Pulsed drain current: 441A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 19.6mΩ Mounting: SMD Gate charge: 63.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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