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BUK7Y9R9-80EX

BUK7Y9R9-80EX Nexperia USA Inc.

BUK7Y9R9-80E.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 89A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 25A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 51.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4266 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.98 EUR
Mindestbestellmenge: 1500
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Technische Details BUK7Y9R9-80EX Nexperia USA Inc.

Description: MOSFET N-CH 80V 89A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Rds On (Max) @ Id, Vgs: 9.9mOhm @ 25A, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 51.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4266 pF @ 25 V, Qualification: AEC-Q101.

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BUK7Y9R9-80EX BUK7Y9R9-80EX Hersteller : Nexperia BUK7Y9R9-80E.pdf MOSFETs BUK7Y9R9-80E/SOT669/LFPAK
auf Bestellung 24324 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.43 EUR
10+1.78 EUR
100+1.36 EUR
500+1.20 EUR
1000+1.07 EUR
1500+1.04 EUR
3000+1.00 EUR
Mindestbestellmenge: 2
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BUK7Y9R9-80EX BUK7Y9R9-80EX Hersteller : Nexperia USA Inc. BUK7Y9R9-80E.pdf Description: MOSFET N-CH 80V 89A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 25A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 51.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4266 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2662 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.50 EUR
10+1.85 EUR
100+1.39 EUR
500+1.20 EUR
Mindestbestellmenge: 8
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BUK7Y9R9-80EX Hersteller : NEXPERIA BUK7Y9R9-80E.pdf BUK7Y9R9-80EX SMD N channel transistors
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