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BUK9214-30A,118

BUK9214-30A,118 Nexperia


BUK9214_30A-2937852.pdf Hersteller: Nexperia
MOSFET BUK9214-30A/SOT428/DPAK
auf Bestellung 10805 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
15+3.51 EUR
17+ 3.15 EUR
100+ 2.47 EUR
500+ 2.02 EUR
1000+ 1.6 EUR
2500+ 1.49 EUR
5000+ 1.41 EUR
Mindestbestellmenge: 15
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Technische Details BUK9214-30A,118 Nexperia

Description: MOSFET N-CH 30V 63A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: DPAK, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2317 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote BUK9214-30A,118

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BUK9214-30A,118 BUK9214-30A,118 Hersteller : NEXPERIA NEXP-S-A0002882047-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: NEXPERIA - BUK9214-30A,118 - Leistungs-MOSFET, n-Kanal, 30 V, 63 A, 0.009 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 63A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 107W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchMOS
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.009ohm
auf Bestellung 9517 Stücke:
Lieferzeit 14-21 Tag (e)
BUK9214-30A,118 BUK9214-30A,118 Hersteller : NEXPERIA NEXP-S-A0002882047-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: NEXPERIA - BUK9214-30A,118 - Leistungs-MOSFET, n-Kanal, 30 V, 63 A, 0.009 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 63A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 107W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchMOS
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.009ohm
auf Bestellung 9517 Stücke:
Lieferzeit 14-21 Tag (e)
BUK9214-30A,118 BUK9214-30A,118 Hersteller : NEXPERIA 3007513654847016buk9214-30a.pdf Trans MOSFET N-CH Si 30V 63A Automotive 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
BUK9214-30A,118 Hersteller : NEXPERIA BUK9214-30A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 253A; 107W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45A
Pulsed drain current: 253A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 26.6mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BUK9214-30A,118 BUK9214-30A,118 Hersteller : Nexperia USA Inc. BUK9214-30A.pdf Description: MOSFET N-CH 30V 63A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2317 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BUK9214-30A,118 BUK9214-30A,118 Hersteller : Nexperia USA Inc. BUK9214-30A.pdf Description: MOSFET N-CH 30V 63A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2317 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BUK9214-30A,118 Hersteller : NEXPERIA BUK9214-30A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 253A; 107W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45A
Pulsed drain current: 253A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 26.6mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar