Produkte > NXP USA INC. > BUK9240-100A/C1,11
BUK9240-100A/C1,11

BUK9240-100A/C1,11 NXP USA Inc.


BUK9240-100A.pdf Hersteller: NXP USA Inc.
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 38.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 3072 pF @ 25 V
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details BUK9240-100A/C1,11 NXP USA Inc.

Description: MOSFET N-CH 100V 33A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 38.6mOhm @ 25A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 3072 pF @ 25 V.