BUK956R1-100E,127 NXP Semiconductors
Hersteller: NXP Semiconductors
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220AB Rail Automotive AEC-Q101
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Technische Details BUK956R1-100E,127 NXP Semiconductors
Description: MOSFET N-CH 100V 120A TO220AB, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 17.46 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Grade: Automotive, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 349W (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote BUK956R1-100E,127 nach Preis ab 6.49 EUR bis 6.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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BUK956R1-100E,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 120A TO220AB Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 17.46 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Grade: Automotive Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 237 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK956R1-100E,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A TO220AB
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 17.46 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Grade: Automotive
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 120A TO220AB
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 17.46 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Grade: Automotive
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 237 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 6.49 EUR |