Technische Details BUK96180-100A,118 Nexperia
Description: MOSFET N-CH 100V 11A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: D2PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK96180-100A,118 nach Preis ab 1.45 EUR bis 1.45 EUR
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| BUK96180-100A,118 | Hersteller : NXP |
 Trans MOSFET N-CH 100V 11A Automotive 3-Pin(2+Tab) D2PAK BUK96180-100A,118 BUK96180-100A TBUK96180-100aAnzahl je Verpackung: 10 Stücke |
auf Bestellung 87 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK96180-100A,118 | Hersteller : NEXPERIA |
BUK96180-100A.118 SMD N channel transistors |
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BUK96180-100A,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 11A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BUK96180-100A,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 11A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |