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BUK969R0-60E,118

BUK969R0-60E,118 Nexperia USA Inc.

BUK969R0-60E.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+2.51 EUR
1600+ 2.13 EUR
2400+ 2.02 EUR
Mindestbestellmenge: 800
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Technische Details BUK969R0-60E,118 Nexperia USA Inc.

Description: MOSFET N-CH 60V 75A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V, Power Dissipation (Max): 137W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: D2PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V, Qualification: AEC-Q101.

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BUK969R0-60E,118 BUK969R0-60E,118 Hersteller : Nexperia USA Inc. BUK969R0-60E.pdf Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4586 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.5 EUR
10+ 3.72 EUR
100+ 2.96 EUR
Mindestbestellmenge: 6
BUK969R0-60E,118 BUK969R0-60E,118 Hersteller : Nexperia BUK969R0_60E-2937720.pdf MOSFET BUK969R0-60E/SOT404/D2PAK
auf Bestellung 3370 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
12+4.52 EUR
14+ 3.74 EUR
100+ 2.99 EUR
500+ 2.91 EUR
800+ 2.13 EUR
2400+ 2.03 EUR
4800+ 1.96 EUR
Mindestbestellmenge: 12
BUK969R0-60E,118 Hersteller : NEXPERIA BUK969R0-60E.pdf BUK969R0-60E.118 SMD N channel transistors
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