Technische Details BUK9K134-100EX Nexperia
Description: NEXPERIA - BUK9K134-100EX - Dual-MOSFET, n-Kanal, 100 V, 100 V, 8.5 A, 8.5 A, 0.122 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 8.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 100V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 8.5A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.122ohm, Verlustleistung, p-Kanal: 32W, Drain-Source-Spannung Vds, n-Kanal: 100V, euEccn: NLR, Bauform - Transistor: LFPAK56D, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.122ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 32W, Betriebstemperatur, max.: 175°C, SVHC: Lead (21-Jan-2025).
Weitere Produktangebote BUK9K134-100EX nach Preis ab 0.6 EUR bis 2.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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BUK9K134-100EX | Nexperia |
 Trans MOSFET N-CH 100V 8.5A 8-Pin LFPAK-D T/R Automotive AEC-Q101 |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9K134-100EX | Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 8.5A LFPAK56D Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 2.1V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V Rds On (Max) @ Id, Vgs: 159mOhm @ 5A, 5V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Current - Continuous Drain (Id) @ 25°C: 8.5A Drain to Source Voltage (Vdss): 100V Power - Max: 32W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K134-100EX | NEXPERIA |
Description: NEXPERIA - BUK9K134-100EX - Dual-MOSFET, n-Kanal, 100 V, 100 V, 8.5 A, 8.5 A, 0.122 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 100V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.122ohm Verlustleistung, p-Kanal: 32W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: LFPAK56D Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.122ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 32W Betriebstemperatur, max.: 175°C SVHC: Lead (21-Jan-2025) |
auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9K134-100EX | NEXPERIA |
Description: NEXPERIA - BUK9K134-100EX - Dual-MOSFET, n-Kanal, 100 V, 100 V, 8.5 A, 8.5 A, 0.122 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 100V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.122ohm Verlustleistung, p-Kanal: 32W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: LFPAK56D Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.122ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 32W Betriebstemperatur, max.: 175°C SVHC: Lead (21-Jan-2025) |
auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9K134-100EX | Nexperia |
MOSFETs The factory is currently not accepting orders for this product. |
auf Bestellung 165 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K134-100EX | Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 8.5A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 32W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.5A Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Rds On (Max) @ Id, Vgs: 159mOhm @ 5A, 5V Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 4047 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9K134-100EX |
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Hersteller: Nexperia
Trans MOSFET N-CH 100V 8.5A 8-Pin LFPAK-D T/R Automotive AEC-Q101
Trans MOSFET N-CH 100V 8.5A 8-Pin LFPAK-D T/R Automotive AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.6 EUR |
| BUK9K134-100EX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 8.5A LFPAK56D
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V
Rds On (Max) @ Id, Vgs: 159mOhm @ 5A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Drain to Source Voltage (Vdss): 100V
Power - Max: 32W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Description: MOSFET 2N-CH 100V 8.5A LFPAK56D
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V
Rds On (Max) @ Id, Vgs: 159mOhm @ 5A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Drain to Source Voltage (Vdss): 100V
Power - Max: 32W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.81 EUR |
| 3000+ | 0.75 EUR |
| BUK9K134-100EX |
|
Hersteller: NEXPERIA
Description: NEXPERIA - BUK9K134-100EX - Dual-MOSFET, n-Kanal, 100 V, 100 V, 8.5 A, 8.5 A, 0.122 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 8.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 100V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 8.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.122ohm
Verlustleistung, p-Kanal: 32W
Drain-Source-Spannung Vds, n-Kanal: 100V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.122ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 32W
Betriebstemperatur, max.: 175°C
SVHC: Lead (21-Jan-2025)
Description: NEXPERIA - BUK9K134-100EX - Dual-MOSFET, n-Kanal, 100 V, 100 V, 8.5 A, 8.5 A, 0.122 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 8.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 100V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 8.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.122ohm
Verlustleistung, p-Kanal: 32W
Drain-Source-Spannung Vds, n-Kanal: 100V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.122ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 32W
Betriebstemperatur, max.: 175°C
SVHC: Lead (21-Jan-2025)
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 117+ | 2.14 EUR |
| 162+ | 1.44 EUR |
| 237+ | 0.9 EUR |
| BUK9K134-100EX |
|
Hersteller: NEXPERIA
Description: NEXPERIA - BUK9K134-100EX - Dual-MOSFET, n-Kanal, 100 V, 100 V, 8.5 A, 8.5 A, 0.122 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 8.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 100V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 8.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.122ohm
Verlustleistung, p-Kanal: 32W
Drain-Source-Spannung Vds, n-Kanal: 100V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.122ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 32W
Betriebstemperatur, max.: 175°C
SVHC: Lead (21-Jan-2025)
Description: NEXPERIA - BUK9K134-100EX - Dual-MOSFET, n-Kanal, 100 V, 100 V, 8.5 A, 8.5 A, 0.122 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 8.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 100V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 8.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.122ohm
Verlustleistung, p-Kanal: 32W
Drain-Source-Spannung Vds, n-Kanal: 100V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.122ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 32W
Betriebstemperatur, max.: 175°C
SVHC: Lead (21-Jan-2025)
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 117+ | 2.14 EUR |
| 162+ | 1.44 EUR |
| 237+ | 0.9 EUR |
| BUK9K134-100EX |
|
Hersteller: Nexperia
MOSFETs The factory is currently not accepting orders for this product.
MOSFETs The factory is currently not accepting orders for this product.
auf Bestellung 165 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.56 EUR |
| 10+ | 1.57 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.69 EUR |
| BUK9K134-100EX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 8.5A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
Rds On (Max) @ Id, Vgs: 159mOhm @ 5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET 2N-CH 100V 8.5A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
Rds On (Max) @ Id, Vgs: 159mOhm @ 5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4047 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.81 EUR |
| 12+ | 1.77 EUR |
| 100+ | 1.18 EUR |
| 500+ | 0.93 EUR |