BUK9M156-100EX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 100V 9.3A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 695 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.64 EUR |
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Technische Details BUK9M156-100EX Nexperia USA Inc.
Description: MOSFET N-CH 100V 9.3A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 695 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9M156-100EX nach Preis ab 0.56 EUR bis 1.52 EUR
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BUK9M156-100EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 9.3A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 695 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3375 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK9M156-100EX | Hersteller : Nexperia |
MOSFET BUK9M156-100E/SOT1210/mLFPAK |
auf Bestellung 13382 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK9M156-100EX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9M156-100EX - Leistungs-MOSFET, n-Kanal, 100 V, 9.3 A, 0.12 ohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 9.3A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 36W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.12ohm |
auf Bestellung 4377 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9M156-100EX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9M156-100EX - Leistungs-MOSFET, n-Kanal, 100 V, 9.3 A, 0.12 ohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 9.3A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 36W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.12ohm |
auf Bestellung 4377 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9M156-100EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 9.3A Automotive 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK9M156-100EX | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 9.3A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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| BUK9M156-100EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 36W Application: automotive industry Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 37A Case: LFPAK33; SOT1210 Drain-source voltage: 100V Drain current: 6.5A On-state resistance: 0.42Ω Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Gate charge: 7.4nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M156-100EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 36W Application: automotive industry Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 37A Case: LFPAK33; SOT1210 Drain-source voltage: 100V Drain current: 6.5A On-state resistance: 0.42Ω Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Gate charge: 7.4nC |
Produkt ist nicht verfügbar |