Produkte > NEXPERIA USA INC. > BUK9MHH-65PNN,518
BUK9MHH-65PNN,518

BUK9MHH-65PNN,518 Nexperia USA Inc.



Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 65V 15A 20SO
Part Status: Obsolete
Supplier Device Package: 20-SO
Vgs(th) (Max) @ Id: 2V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 44.6nC @ 5V
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3643pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 65V
Power - Max: 5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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Technische Details BUK9MHH-65PNN,518 Nexperia USA Inc.

Description: MOSFET 2N-CH 65V 15A 20SO, Part Status: Obsolete, Supplier Device Package: 20-SO, Vgs(th) (Max) @ Id: 2V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 44.6nC @ 5V, Rds On (Max) @ Id, Vgs: 10.6mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 3643pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Drain to Source Voltage (Vdss): 65V, Power - Max: 5W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 20-SOIC (0.295", 7.50mm Width), Packaging: Tape & Reel (TR).