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BUK9V13-40HX

BUK9V13-40HX Nexperia

BUK9V13-40H.pdf
Hersteller: Nexperia
MOSFETs BUK9V13-40H/SOT1205/LFPAK56D
auf Bestellung 4022 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+3.06 EUR
10+2.01 EUR
100+1.52 EUR
500+1.24 EUR
1500+0.96 EUR
3000+0.84 EUR
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Technische Details BUK9V13-40HX Nexperia

Description: MOSFET 2N-CH 40V 42A LFPAK56D, Part Status: Active, Supplier Device Package: LFPAK56D, Vgs(th) (Max) @ Id: 2.2V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V, Qualification: AEC-Q101, Grade: Automotive, Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 42A (Ta), Drain to Source Voltage (Vdss): 40V, Power - Max: 46W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR).

Weitere Produktangebote BUK9V13-40HX nach Preis ab 1.24 EUR bis 5.64 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
BUK9V13-40HX BUK9V13-40HX Nexperia USA Inc. BUK9V13-40H.pdf Description: MOSFET 2N-CH 40V 42A LFPAK56D
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.2V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 46W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 712 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.62 EUR
10+2.32 EUR
100+1.56 EUR
500+1.24 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9V13-40HX BUK9V13-40HX Nexperia USA Inc. BUK9V13-40H.pdf Description: MOSFET 2N-CH 40V 42A LFPAK56D
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.2V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 46W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9V13-40HX NXP TBUK9V13-40HX_NXP_0001.pdf Transistor 2xN-Channel MOSFET; 40V; 10V; 13mOhm; 42A; 46W; -55°C~175°C; Substitute: BUK9V13-40H; BUK9V13-40HX; BUK9V13-40HX TBUK9V13-40HX
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+5.64 EUR
Mindestbestellmenge: 10 Stücke
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BUK9V13-40HX BUK9V13-40H.pdf
BUK9V13-40HX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 42A LFPAK56D
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.2V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 46W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 712 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.62 EUR
10+2.32 EUR
100+1.56 EUR
500+1.24 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9V13-40HX BUK9V13-40H.pdf
BUK9V13-40HX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 42A LFPAK56D
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.2V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 46W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK9V13-40HX TBUK9V13-40HX_NXP_0001.pdf
Hersteller: NXP
Transistor 2xN-Channel MOSFET; 40V; 10V; 13mOhm; 42A; 46W; -55°C~175°C; Substitute: BUK9V13-40H; BUK9V13-40HX; BUK9V13-40HX TBUK9V13-40HX
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
10+5.64 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH