| Anzahl | Preis |
|---|---|
| 2+ | 2.53 EUR |
| 10+ | 1.59 EUR |
| 50+ | 1.17 EUR |
| 100+ | 1.04 EUR |
| 500+ | 1.02 EUR |
| 1500+ | 0.69 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK9Y22-60ELX Nexperia
Description: SINGLE N-CHANNEL 60 V, 15 MOHM L, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 14.8mOhm @ 10A, 10V, Power Dissipation (Max): 95W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK9Y22-60ELX
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
BUK9Y22-60ELX | Hersteller : Nexperia USA Inc. |
 Description: SINGLE N-CHANNEL 60 V, 15 MOHM LPackaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 14.8mOhm @ 10A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|
|
|
BUK9Y22-60ELX | Hersteller : Nexperia USA Inc. |
Description: SINGLE N-CHANNEL 60 V, 15 MOHM L Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 14.8mOhm @ 10A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |