BUK9Y4R8-60E,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7853 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 1.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK9Y4R8-60E,115 Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V, Power Dissipation (Max): 238W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 7853 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9Y4R8-60E,115 nach Preis ab 1.06 EUR bis 3.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BUK9Y4R8-60E,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 100A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 222 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
BUK9Y4R8-60E,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 100A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 222 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
BUK9Y4R8-60E,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 7853 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 14077 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
BUK9Y4R8-60E,115 | Hersteller : Nexperia |
MOSFETs BUK9Y4R8-60E/SOT669/LFPAK |
auf Bestellung 5181 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
BUK9Y4R8-60E,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9Y4R8-60E,115 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0029 ohm, SOT-669, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 238W Bauform - Transistor: SOT-669 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0029ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 2521 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
 |
BUK9Y4R8-60E,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 60V 100A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
BUK9Y4R8-60E,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 100A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||
| BUK9Y4R8-60E,115 | Hersteller : NEXPERIA |
BUK9Y4R8-60E.115 SMD N channel transistors |
Produkt ist nicht verfügbar |