BUK9Y8R8-60ELX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: SINGLE N-CHANNEL 60 V, 5.6 MOHM
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6695 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 194W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Qualification: AEC-Q101
Grade: Automotive
| Anzahl | Preis |
|---|---|
| 1500+ | 1.44 EUR |
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Technische Details BUK9Y8R8-60ELX Nexperia USA Inc.
Description: SINGLE N-CHANNEL 60 V, 5.6 MOHM, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 6695 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 194W (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote BUK9Y8R8-60ELX nach Preis ab 0.87 EUR bis 3.31 EUR
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BUK9Y8R8-60ELX | Hersteller : Nexperia |
MOSFETs SOT669 N-CH 60V 110A |
auf Bestellung 8084 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y8R8-60ELX | Hersteller : Nexperia USA Inc. |
Description: SINGLE N-CHANNEL 60 V, 5.6 MOHM Input Capacitance (Ciss) (Max) @ Vds: 6695 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 194W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 2838 Stücke: Lieferzeit 10-14 Tag (e) |
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