BUZ31H3046 Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Active, Supplier Device Package: PG-TO262-3-1, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 95W (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V, Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Bulk.