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BUZ32 INF


Buz32_Rev%2B2.2.pdf Hersteller: INF
TO-220
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Technische Details BUZ32 INF

Description: MOSFET N-CH 200V 9.5A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V.

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BUZ32 Hersteller : INFINEON Buz32_Rev%2B2.2.pdf 09+
auf Bestellung 5030 Stücke:
Lieferzeit 21-28 Tag (e)
BUZ32 BUZ32 Hersteller : Infineon Technologies Buz32_Rev%2B2.2.pdf Description: MOSFET N-CH 200V 9.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Produkt ist nicht verfügbar
BUZ32 BUZ32 Hersteller : Infineon Technologies DC_DC_Selection_1-520800.pdf MOSFET N-Ch 200V 9.5A TO220-3
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