BUZ32HXKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
auf Bestellung 7393 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 507+ | 0.99 EUR |
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Technische Details BUZ32HXKSA1 Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V.
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Description: ROCHESTER ELECTRONICS - BUZ32HXKSA1 - BUZ32 POWER FIELD-EFFECT TRANSISTOR, 9. tariffCode: 85412100 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 7393 Stücke: Lieferzeit 14-21 Tag (e) |
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BUZ32HXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |