BUZ32HXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produktrezensionen
Produktbewertung abgeben
Technische Details BUZ32HXKSA1 Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 75W (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.
Weitere Produktangebote BUZ32HXKSA1 nach Preis ab 0.42 EUR bis 1.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUZ32HXKSA1 | Infineon Technologies |
Trans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1374 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
| BUZ32HXKSA1 | ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BUZ32HXKSA1 - BUZ32 POWER FIELD-EFFECT TRANSISTOR, 9.tariffCode: 85412100 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 7393 Stücke: Lieferzeit 14-21 Tag (e) |
|
| BUZ32HXKSA1 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 1374 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 212+ | 0.82 EUR |
| 256+ | 0.65 EUR |
| 302+ | 0.54 EUR |
| 330+ | 0.48 EUR |
| 359+ | 0.42 EUR |
| BUZ32HXKSA1 |
![]() |
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BUZ32HXKSA1 - BUZ32 POWER FIELD-EFFECT TRANSISTOR, 9.
tariffCode: 85412100
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
Description: ROCHESTER ELECTRONICS - BUZ32HXKSA1 - BUZ32 POWER FIELD-EFFECT TRANSISTOR, 9.
tariffCode: 85412100
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 7393 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 488+ | 1.5 EUR |

