BUZ73ALHXKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 5V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
auf Bestellung 5791 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 717+ | 0.7 EUR |
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Technische Details BUZ73ALHXKSA1 Infineon Technologies
Description: MOSFET N-CH 200V 5.5A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 5V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V.
Weitere Produktangebote BUZ73ALHXKSA1 nach Preis ab 0.9 EUR bis 0.9 EUR
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BUZ73ALHXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 5.5A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 5791 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUZ73ALHXKSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BUZ73ALHXKSA1 - BUZ73 POWER FIELD-EFFECT TRANSISTOR, 5. tariffCode: 85412100 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 3846 Stücke: Lieferzeit 14-21 Tag (e) |
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BUZ73ALHXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 5.5A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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BUZ73ALHXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 5.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 5V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V |
Produkt ist nicht verfügbar |