BVSS123LT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
| 6000+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BVSS123LT1G onsemi
Description: MOSFET N-CH 100V 170MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V, Power Dissipation (Max): 225mW (Ta), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BVSS123LT1G nach Preis ab 0.11 EUR bis 0.79 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BVSS123LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Drain current: 0.17A Power dissipation: 0.225W On-state resistance: 6Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement |
auf Bestellung 1865 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
BVSS123LT1G | onsemi |
Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 10695 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
BVSS123LT1G | onsemi |
MOSFETs NFET 100V 170MA 6OH |
auf Bestellung 9534 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BVSS123LT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.225W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.225W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 1865 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 207+ | 0.35 EUR |
| 235+ | 0.3 EUR |
| 394+ | 0.18 EUR |
| 556+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| BVSS123LT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 10695 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 0.65 EUR |
| 44+ | 0.4 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| BVSS123LT1G |
|
Hersteller: onsemi
MOSFETs NFET 100V 170MA 6OH
MOSFETs NFET 100V 170MA 6OH
auf Bestellung 9534 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 0.79 EUR |
| 10+ | 0.51 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.19 EUR |