BXC65R380D BRIDGELUX
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 118W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 118W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: reel; tube
Pulsed drain current: 44A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 118W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 118W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: reel; tube
Pulsed drain current: 44A
Anzahl je Verpackung: 1 Stücke
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Technische Details BXC65R380D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 118W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 11A, Power dissipation: 118W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 0.38Ω, Mounting: SMD, Kind of channel: enhancement, Gate charge: 19nC, Kind of package: reel; tube, Pulsed drain current: 44A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXC65R380D
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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BXC65R380D | Hersteller : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 118W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 118W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhancement Gate charge: 19nC Kind of package: reel; tube Pulsed drain current: 44A |
Produkt ist nicht verfügbar |