Produkte > BRIDGELUX > BXC65R380F

BXC65R380F BRIDGELUX


Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 33W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 33W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: tube
Pulsed drain current: 44A
Anzahl je Verpackung: 1 Stücke
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Technische Details BXC65R380F BRIDGELUX

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 33W; TO220F, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 11A, Power dissipation: 33W, Case: TO220F, Gate-source voltage: ±30V, On-state resistance: 0.38Ω, Mounting: THT, Kind of channel: enhancement, Gate charge: 19nC, Kind of package: tube, Pulsed drain current: 44A, Anzahl je Verpackung: 1 Stücke.

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BXC65R380F Hersteller : BRIDGELUX Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 33W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 33W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: tube
Pulsed drain current: 44A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH