BXE75T60HFHD BRIDGELUX
Hersteller: BRIDGELUXCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 156W; TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 185ns
Turn-off time: 391ns
Type of transistor: IGBT
Power dissipation: 156W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 430nC
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
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Technische Details BXE75T60HFHD BRIDGELUX
Category: THT IGBT transistors, Description: Transistor: IGBT; 600V; 75A; 156W; TO247-3, Collector-emitter voltage: 600V, Gate-emitter voltage: ±20V, Collector current: 75A, Pulsed collector current: 300A, Turn-on time: 185ns, Turn-off time: 391ns, Type of transistor: IGBT, Power dissipation: 156W, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Gate charge: 430nC, Mounting: THT, Case: TO247-3, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXE75T60HFHD
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BXE75T60HFHD | Hersteller : BRIDGELUX |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 156W; TO247-3 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 300A Turn-on time: 185ns Turn-off time: 391ns Type of transistor: IGBT Power dissipation: 156W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 430nC Mounting: THT Case: TO247-3 |
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