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BXP10N60F

BXP10N60F BRIDGELUX


BXP10N60F-DTE.pdf
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 48W
Case: TO220F
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
auf Bestellung 513 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
91+0.79 EUR
101+0.71 EUR
114+0.63 EUR
250+0.56 EUR
Mindestbestellmenge: 80
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Technische Details BXP10N60F BRIDGELUX

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 10A, Power dissipation: 48W, Case: TO220F, On-state resistance: 0.68Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Pulsed drain current: 40A.