BXP10N65CF BRIDGELUX
Hersteller: BRIDGELUXCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Pulsed drain current: 40A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 734 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 99+ | 0.73 EUR |
| 128+ | 0.56 EUR |
| 148+ | 0.48 EUR |
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Technische Details BXP10N65CF BRIDGELUX
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 5A, Power dissipation: 48W, Case: TO220F, Gate-source voltage: ±30V, On-state resistance: 1Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Gate charge: 32nC, Pulsed drain current: 40A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXP10N65CF nach Preis ab 0.48 EUR bis 0.73 EUR
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BXP10N65CF | Hersteller : BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 48W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 32nC Pulsed drain current: 40A |
auf Bestellung 734 Stücke: Lieferzeit 14-21 Tag (e) |
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