Produkte > BRIDGELUX > BXP13N50P

BXP13N50P BRIDGELUX

Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Case: TO220
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 38nC
On-state resistance: 0.46Ω
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 158W
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement

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Technische Details BXP13N50P BRIDGELUX

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220, Type of transistor: N-MOSFET, Case: TO220, Kind of package: tube, Mounting: THT, Polarisation: unipolar, Gate charge: 38nC, On-state resistance: 0.46Ω, Drain current: 13A, Pulsed drain current: 52A, Power dissipation: 158W, Gate-source voltage: ±30V, Drain-source voltage: 500V, Kind of channel: enhancement.