
BXP18N20F BRIDGELUX

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F
Case: TO220F
Mounting: THT
Drain current: 11A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Kind of package: tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 200V
Pulsed drain current: 72A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 302 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
68+ | 1.06 EUR |
85+ | 0.85 EUR |
95+ | 0.76 EUR |
131+ | 0.55 EUR |
139+ | 0.52 EUR |
500+ | 0.51 EUR |
1000+ | 0.5 EUR |
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Technische Details BXP18N20F BRIDGELUX
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F, Case: TO220F, Mounting: THT, Drain current: 11A, On-state resistance: 0.18Ω, Type of transistor: N-MOSFET, Power dissipation: 55W, Polarisation: unipolar, Kind of package: tube, Gate charge: 23nC, Kind of channel: enhancement, Gate-source voltage: ±30V, Drain-source voltage: 200V, Pulsed drain current: 72A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXP18N20F nach Preis ab 0.52 EUR bis 1.06 EUR
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BXP18N20F | Hersteller : BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F Case: TO220F Mounting: THT Drain current: 11A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 55W Polarisation: unipolar Kind of package: tube Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±30V Drain-source voltage: 200V Pulsed drain current: 72A |
auf Bestellung 302 Stücke: Lieferzeit 14-21 Tag (e) |
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