BXP18N20F BRIDGELUX
Hersteller: BRIDGELUXCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F
Case: TO220F
Mounting: THT
Kind of package: tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 302 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 65+ | 1.10 EUR |
| 82+ | 0.87 EUR |
| 92+ | 0.78 EUR |
| 131+ | 0.55 EUR |
| 139+ | 0.52 EUR |
| 1000+ | 0.50 EUR |
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Technische Details BXP18N20F BRIDGELUX
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F, Case: TO220F, Mounting: THT, Kind of package: tube, Gate charge: 23nC, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 72A, Drain-source voltage: 200V, Drain current: 11A, On-state resistance: 0.18Ω, Type of transistor: N-MOSFET, Power dissipation: 55W, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXP18N20F nach Preis ab 0.52 EUR bis 1.10 EUR
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BXP18N20F | Hersteller : BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F Case: TO220F Mounting: THT Kind of package: tube Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 11A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 55W Polarisation: unipolar |
auf Bestellung 302 Stücke: Lieferzeit 14-21 Tag (e) |
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