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BXP2N20L BRIDGELUX


BXP2N20L.pdf
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 185V; 1.2A; Idm: 8A; 2W; SOT23-3
Power dissipation: 2W
Kind of package: reel; tape
Case: SOT23-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.5nC
On-state resistance: 1.8Ω
Drain current: 1.2A
Pulsed drain current: 8A
Gate-source voltage: ±30V
Drain-source voltage: 185V
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
417+0.2 EUR
532+0.15 EUR
596+0.14 EUR
705+0.12 EUR
794+0.11 EUR
893+0.095 EUR
1000+0.09 EUR
Mindestbestellmenge: 417 Stücke
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Technische Details BXP2N20L BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 185V; 1.2A; Idm: 8A; 2W; SOT23-3, Power dissipation: 2W, Kind of package: reel; tape, Case: SOT23-3, Mounting: SMD, Kind of channel: enhancement, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 4.5nC, On-state resistance: 1.8Ω, Drain current: 1.2A, Pulsed drain current: 8A, Gate-source voltage: ±30V, Drain-source voltage: 185V.