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BXP2N65D

BXP2N65D BRIDGELUX

BXP2N65.pdf
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1224 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
374+0.19 EUR
417+0.17 EUR
500+0.14 EUR
550+0.13 EUR
625+0.11 EUR
Mindestbestellmenge: 295
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Technische Details BXP2N65D BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 1.21A, Pulsed drain current: 8A, Power dissipation: 44W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 5Ω, Mounting: SMD, Gate charge: 8.5nC, Kind of package: reel; tape, Kind of channel: enhancement.