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BXP2N65U BRIDGELUX


BXP2N65.pdf
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 8.5nC
auf Bestellung 1425 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
264+0.32 EUR
332+0.26 EUR
371+0.23 EUR
443+0.19 EUR
491+0.18 EUR
556+0.15 EUR
975+0.14 EUR
Mindestbestellmenge: 264 Stücke
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Technische Details BXP2N65U BRIDGELUX

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 1.21A, Power dissipation: 44W, Case: TO251, Gate-source voltage: ±30V, On-state resistance: 5Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Pulsed drain current: 8A, Gate charge: 8.5nC.