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BXP3N1KF

BXP3N1KF BRIDGELUX

BXP3N1K.pdf
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F
Case: TO220F
Pulsed drain current: 12A
Power dissipation: 25W
Gate charge: 18nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 6Ω
Mounting: THT
auf Bestellung 783 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
76+1.12 EUR
87+0.99 EUR
109+0.79 EUR
145+0.58 EUR
250+0.52 EUR
500+0.46 EUR
Mindestbestellmenge: 76 Stücke
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Technische Details BXP3N1KF BRIDGELUX

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F, Case: TO220F, Pulsed drain current: 12A, Power dissipation: 25W, Gate charge: 18nC, Polarisation: unipolar, Drain current: 1.6A, Kind of channel: enhancement, Drain-source voltage: 1kV, Type of transistor: N-MOSFET, Gate-source voltage: ±30V, Kind of package: tube, On-state resistance: 6Ω, Mounting: THT.