BXP3N1KF BRIDGELUX
Hersteller: BRIDGELUXCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
Pulsed drain current: 12A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 785 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 88+ | 0.82 EUR |
| 110+ | 0.65 EUR |
| 147+ | 0.49 EUR |
| 250+ | 0.44 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.38 EUR |
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Technische Details BXP3N1KF BRIDGELUX
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 1.6A, Power dissipation: 25W, Case: TO220F, Gate-source voltage: ±30V, On-state resistance: 6Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Gate charge: 18nC, Pulsed drain current: 12A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXP3N1KF nach Preis ab 0.39 EUR bis 0.93 EUR
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BXP3N1KF | Hersteller : BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 25W Case: TO220F Gate-source voltage: ±30V On-state resistance: 6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 18nC Pulsed drain current: 12A |
auf Bestellung 785 Stücke: Lieferzeit 14-21 Tag (e) |
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