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BXP4N65D

BXP4N65D BRIDGELUX

BXP4N65.pdf
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
Pulsed drain current: 16A
Power dissipation: 77W
auf Bestellung 1888 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
186+0.46 EUR
229+0.37 EUR
256+0.33 EUR
305+0.27 EUR
338+0.25 EUR
500+0.23 EUR
1000+0.2 EUR
Mindestbestellmenge: 186 Stücke
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Technische Details BXP4N65D BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 2.5A, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 2.8Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 13nC, Pulsed drain current: 16A, Power dissipation: 77W.