BXP4N65D BRIDGELUX
Hersteller: BRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1945 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 230+ | 0.31 EUR |
| 258+ | 0.28 EUR |
| 307+ | 0.23 EUR |
| 341+ | 0.21 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.17 EUR |
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Technische Details BXP4N65D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 2.5A, Pulsed drain current: 16A, Power dissipation: 77W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 2.8Ω, Mounting: SMD, Gate charge: 13nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXP4N65D nach Preis ab 0.17 EUR bis 0.39 EUR
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BXP4N65D | Hersteller : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1945 Stücke: Lieferzeit 14-21 Tag (e) |
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