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BXP4N65U BRIDGELUX


BXP4N65.pdf
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13nC
Pulsed drain current: 16A
Power dissipation: 77W
auf Bestellung 1565 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
193+0.44 EUR
246+0.35 EUR
274+0.31 EUR
327+0.26 EUR
363+0.24 EUR
525+0.2 EUR
975+0.19 EUR
Mindestbestellmenge: 193 Stücke
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Technische Details BXP4N65U BRIDGELUX

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 2.5A, Case: TO251, Gate-source voltage: ±30V, On-state resistance: 2.8Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Gate charge: 13nC, Pulsed drain current: 16A, Power dissipation: 77W.