BXS105N10B BRIDGELUX
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 3.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 3.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details BXS105N10B BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 14A, Pulsed drain current: 56A, Power dissipation: 3.5W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 10.5mΩ, Mounting: SMD, Gate charge: 71nC, Kind of package: reel, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXS105N10B
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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BXS105N10B | Hersteller : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 14A Pulsed drain current: 56A Power dissipation: 3.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 71nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |