BXS105N10B BRIDGELUX
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Kind of package: reel
Case: SOP8
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Drain-source voltage: 100V
Drain current: 14A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Kind of package: reel
Case: SOP8
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Drain-source voltage: 100V
Drain current: 14A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
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Technische Details BXS105N10B BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8, Kind of package: reel, Case: SOP8, Mounting: SMD, Gate charge: 71nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 56A, Drain-source voltage: 100V, Drain current: 14A, On-state resistance: 10.5mΩ, Type of transistor: N-MOSFET, Power dissipation: 3.5W, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXS105N10B
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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BXS105N10B | Hersteller : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8 Kind of package: reel Case: SOP8 Mounting: SMD Gate charge: 71nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 56A Drain-source voltage: 100V Drain current: 14A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 3.5W Polarisation: unipolar |
Produkt ist nicht verfügbar |