BXS105N10B BRIDGELUX
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Case: SOP8
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 71nC
On-state resistance: 10.5mΩ
Power dissipation: 3.5W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 56A
Drain-source voltage: 100V
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Case: SOP8
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 71nC
On-state resistance: 10.5mΩ
Power dissipation: 3.5W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 56A
Drain-source voltage: 100V
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
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Technische Details BXS105N10B BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8, Case: SOP8, Polarisation: unipolar, Kind of channel: enhancement, Gate charge: 71nC, On-state resistance: 10.5mΩ, Power dissipation: 3.5W, Drain current: 14A, Gate-source voltage: ±20V, Pulsed drain current: 56A, Drain-source voltage: 100V, Mounting: SMD, Type of transistor: N-MOSFET, Kind of package: reel.