Produkte > BRIDGELUX > BXS105N10B

BXS105N10B BRIDGELUX



Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel
Case: SOP8
On-state resistance: 10.5mΩ
Mounting: SMD
Pulsed drain current: 56A
Power dissipation: 3.5W
Gate charge: 71nC
Polarisation: unipolar
Drain current: 14A
Kind of channel: enhancement
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Technische Details BXS105N10B BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel, Case: SOP8, On-state resistance: 10.5mΩ, Mounting: SMD, Pulsed drain current: 56A, Power dissipation: 3.5W, Gate charge: 71nC, Polarisation: unipolar, Drain current: 14A, Kind of channel: enhancement.