BXS130N10C BRIDGELUX
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56
Drain-source voltage: 100V
Drain current: 52A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of package: reel
Gate charge: 35nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 208A
Mounting: SMD
Case: PDFN56
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56
Drain-source voltage: 100V
Drain current: 52A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of package: reel
Gate charge: 35nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 208A
Mounting: SMD
Case: PDFN56
Anzahl je Verpackung: 1 Stücke
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Technische Details BXS130N10C BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56, Drain-source voltage: 100V, Drain current: 52A, On-state resistance: 13mΩ, Type of transistor: N-MOSFET, Power dissipation: 57W, Polarisation: unipolar, Kind of package: reel, Gate charge: 35nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 208A, Mounting: SMD, Case: PDFN56, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXS130N10C
Foto | Bezeichnung | Hersteller | Beschreibung |
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BXS130N10C | Hersteller : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56 Drain-source voltage: 100V Drain current: 52A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Kind of package: reel Gate charge: 35nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 208A Mounting: SMD Case: PDFN56 |
Produkt ist nicht verfügbar |