Produkte > BRIDGELUX > BXS130N10C

BXS130N10C BRIDGELUX

Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56
Mounting: SMD
Pulsed drain current: 208A
Power dissipation: 57W
Gate charge: 35nC
Polarisation: unipolar
Drain current: 52A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel
Case: PDFN56
On-state resistance: 13mΩ

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Technische Details BXS130N10C BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56, Mounting: SMD, Pulsed drain current: 208A, Power dissipation: 57W, Gate charge: 35nC, Polarisation: unipolar, Drain current: 52A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel, Case: PDFN56, On-state resistance: 13mΩ.