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BXT090N06B

BXT090N06B BRIDGELUX

BXT090N06B.pdf
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 12mΩ
Mounting: SMD
Pulsed drain current: 68A
Power dissipation: 4.8W
Gate charge: 99nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 60V
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Technische Details BXT090N06B BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SOP8, On-state resistance: 12mΩ, Mounting: SMD, Pulsed drain current: 68A, Power dissipation: 4.8W, Gate charge: 99nC, Polarisation: unipolar, Drain current: 11A, Kind of channel: enhancement, Drain-source voltage: 60V.