BXT210N02M BRIDGELUX
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Mounting: SMD
Pulsed drain current: 27.2A
Power dissipation: 1.6W
Gate charge: 12.1nC
Polarisation: unipolar
Drain current: 6.8A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel
Case: SOT23
On-state resistance: 21mΩ
| Anzahl | Privatkunde |
|---|---|
| 209+ | 0.4 EUR |
| 319+ | 0.26 EUR |
| 642+ | 0.13 EUR |
| 1067+ | 0.08 EUR |
| 1603+ | 0.054 EUR |
| 2000+ | 0.043 EUR |
| 3000+ | 0.042 EUR |
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Technische Details BXT210N02M BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23, Mounting: SMD, Pulsed drain current: 27.2A, Power dissipation: 1.6W, Gate charge: 12.1nC, Polarisation: unipolar, Drain current: 6.8A, Kind of channel: enhancement, Drain-source voltage: 20V, Type of transistor: N-MOSFET, Gate-source voltage: ±12V, Kind of package: reel, Case: SOT23, On-state resistance: 21mΩ.

