Produkte > BRIDGELUX > BXT210N02M

BXT210N02M BRIDGELUX



Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Mounting: SMD
Pulsed drain current: 27.2A
Power dissipation: 1.6W
Gate charge: 12.1nC
Polarisation: unipolar
Drain current: 6.8A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel
Case: SOT23
On-state resistance: 21mΩ
auf Bestellung 11704 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
209+0.4 EUR
323+0.26 EUR
645+0.13 EUR
1076+0.079 EUR
1613+0.052 EUR
2025+0.042 EUR
Mindestbestellmenge: 209 Stücke
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Technische Details BXT210N02M BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23, Mounting: SMD, Pulsed drain current: 27.2A, Power dissipation: 1.6W, Gate charge: 12.1nC, Polarisation: unipolar, Drain current: 6.8A, Kind of channel: enhancement, Drain-source voltage: 20V, Type of transistor: N-MOSFET, Gate-source voltage: ±12V, Kind of package: reel, Case: SOT23, On-state resistance: 21mΩ.