
BXT210N02M BRIDGELUX
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Drain-source voltage: 20V
Drain current: 6.8A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel
Gate charge: 12.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 27.2A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Drain-source voltage: 20V
Drain current: 6.8A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel
Gate charge: 12.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 27.2A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11975 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
304+ | 0.24 EUR |
604+ | 0.12 EUR |
1007+ | 0.071 EUR |
1511+ | 0.047 EUR |
1825+ | 0.039 EUR |
1887+ | 0.038 EUR |
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Technische Details BXT210N02M BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23, Drain-source voltage: 20V, Drain current: 6.8A, On-state resistance: 21mΩ, Type of transistor: N-MOSFET, Power dissipation: 1.6W, Polarisation: unipolar, Kind of package: reel, Gate charge: 12.1nC, Kind of channel: enhancement, Gate-source voltage: ±12V, Pulsed drain current: 27.2A, Mounting: SMD, Case: SOT23, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXT210N02M nach Preis ab 0.036 EUR bis 0.37 EUR
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BXT210N02M | Hersteller : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23 Drain-source voltage: 20V Drain current: 6.8A On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel Gate charge: 12.1nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 27.2A Mounting: SMD Case: SOT23 |
auf Bestellung 11975 Stücke: Lieferzeit 14-21 Tag (e) |
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