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BY25Q80BSSIG(T)

BY25Q80BSSIG(T) BYTe Semiconductor


BY25Q80BS.pdf Hersteller: BYTe Semiconductor
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 1M x 8
auf Bestellung 9500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
27+ 0.67 EUR
95+ 0.5 EUR
285+ 0.46 EUR
570+ 0.39 EUR
1045+ 0.3 EUR
2565+ 0.28 EUR
5035+ 0.26 EUR
Mindestbestellmenge: 23
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Technische Details BY25Q80BSSIG(T) BYTe Semiconductor

Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40, Packaging: Tube, Package / Case: 8-SOIC (0.209", 5.30mm Width), Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR (SLC), Clock Frequency: 108 MHz, Memory Format: FLASH, Supplier Device Package: 8-SOP, Write Cycle Time - Word, Page: 50µs, 2.4ms, Memory Interface: SPI - Quad I/O, QPI, Access Time: 7 ns, Memory Organization: 1M x 8.