BYG10GHE3_A/H Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE AVAL 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 12600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1800+ | 0.24 EUR |
| 3600+ | 0.22 EUR |
| 5400+ | 0.21 EUR |
| 9000+ | 0.20 EUR |
| 12600+ | 0.19 EUR |
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Produktbewertung abgeben
Technische Details BYG10GHE3_A/H Vishay General Semiconductor - Diodes Division
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 400V; 1.5A; 4us; DO214AC,SMA; Ufmax: 1.15V, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 0.4kV, Load current: 1.5A, Reverse recovery time: 4µs, Semiconductor structure: single diode, Features of semiconductor devices: avalanche breakdown effect; glass passivated, Case: DO214AC; SMA, Max. forward voltage: 1.15V, Max. forward impulse current: 30A, Leakage current: 10µA, Kind of package: 7 inch reel, Quantity in set/package: 1800pcs., Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BYG10GHE3_A/H nach Preis ab 0.29 EUR bis 0.99 EUR
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BYG10GHE3_A/H | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 400V 1.5A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Qualification: AEC-Q101 |
auf Bestellung 12600 Stücke: Lieferzeit 10-14 Tag (e) |
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| BYG10GHE3_A/H | Hersteller : Vishay |
Rectifier Diode Switching 400V 1.5A 4000ns Automotive 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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BYG10GHE3_A/H | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1.5A; 4us; DO214AC,SMA; Ufmax: 1.15V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1.5A Reverse recovery time: 4µs Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Case: DO214AC; SMA Max. forward voltage: 1.15V Max. forward impulse current: 30A Leakage current: 10µA Kind of package: 7 inch reel Quantity in set/package: 1800pcs. Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BYG10GHE3_A/H | Hersteller : Vishay General Semiconductor |
Rectifiers 1.5A,400V,STD,AVAL AEC-Q101 Qualified |
Produkt ist nicht verfügbar |
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BYG10GHE3_A/H | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1.5A; 4us; DO214AC,SMA; Ufmax: 1.15V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1.5A Reverse recovery time: 4µs Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Case: DO214AC; SMA Max. forward voltage: 1.15V Max. forward impulse current: 30A Leakage current: 10µA Kind of package: 7 inch reel Quantity in set/package: 1800pcs. |
Produkt ist nicht verfügbar |