BYG10KHE3_A/H Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
| Anzahl | Preis |
|---|---|
| 1800+ | 0.21 EUR |
| 3600+ | 0.19 EUR |
| 5400+ | 0.18 EUR |
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Technische Details BYG10KHE3_A/H Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO214AC, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A, Voltage - DC Reverse (Vr) (Max): 800 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 1.5A, Technology: Avalanche, Reverse Recovery Time (trr): 4 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 1 µA @ 800 V.
Weitere Produktangebote BYG10KHE3_A/H nach Preis ab 0.32 EUR bis 1.07 EUR
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BYG10KHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 800V 1.5A DO214AC Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Technology: Avalanche Reverse Recovery Time (trr): 4 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
auf Bestellung 14400 Stücke: Lieferzeit 10-14 Tag (e) |
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| BYG10KHE3_A/H |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE AVAL 800V 1.5A DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 14400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.07 EUR |
| 27+ | 0.66 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.32 EUR |