BYG10M-CT

BYG10M-CT Diotec Semiconductor


byg10d.pdf Hersteller: Diotec Semiconductor
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Strip
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 2520000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1875+0.34 EUR
3750+ 0.17 EUR
7500+ 0.085 EUR
15000+ 0.084 EUR
Mindestbestellmenge: 1875
Produktrezensionen
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Technische Details BYG10M-CT Diotec Semiconductor

Description: DIODE AVALANCHE 1KV 1.5A DO214AC, Packaging: Strip, Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Avalanche, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -50°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A, Current - Reverse Leakage @ Vr: 5 µA @ 1 V.