
BYG10M-E3/TR3 Vishay General Semiconductor - Diodes Division

Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
7500+ | 0.14 EUR |
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Technische Details BYG10M-E3/TR3 Vishay General Semiconductor - Diodes Division
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 1kV; 1.5A; 4us; DO214AC,SMA; Ufmax: 1.15V, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 1kV, Load current: 1.5A, Reverse recovery time: 4µs, Semiconductor structure: single diode, Features of semiconductor devices: avalanche breakdown effect; glass passivated, Case: DO214AC; SMA, Max. forward voltage: 1.15V, Max. forward impulse current: 30A, Leakage current: 10µA, Kind of package: 13 inch reel, Quantity in set/package: 7500pcs., Anzahl je Verpackung: 7500 Stücke.
Weitere Produktangebote BYG10M-E3/TR3 nach Preis ab 0.16 EUR bis 0.63 EUR
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BYG10M-E3/TR3 | Hersteller : Vishay General Semiconductor |
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auf Bestellung 10157 Stücke: Lieferzeit 10-14 Tag (e) |
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BYG10M-E3/TR3 | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
auf Bestellung 11983 Stücke: Lieferzeit 10-14 Tag (e) |
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BYG10M-E3/TR3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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BYG10M-E3/TR3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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BYG10M-E3/TR3 | Hersteller : VISHAY |
![]() Description: Diode: rectifying; SMD; 1kV; 1.5A; 4us; DO214AC,SMA; Ufmax: 1.15V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 4µs Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Case: DO214AC; SMA Max. forward voltage: 1.15V Max. forward impulse current: 30A Leakage current: 10µA Kind of package: 13 inch reel Quantity in set/package: 7500pcs. Anzahl je Verpackung: 7500 Stücke |
Produkt ist nicht verfügbar |
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BYG10M-E3/TR3 | Hersteller : VISHAY |
![]() Description: Diode: rectifying; SMD; 1kV; 1.5A; 4us; DO214AC,SMA; Ufmax: 1.15V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 4µs Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Case: DO214AC; SMA Max. forward voltage: 1.15V Max. forward impulse current: 30A Leakage current: 10µA Kind of package: 13 inch reel Quantity in set/package: 7500pcs. |
Produkt ist nicht verfügbar |